? semiconductor components industries, llc, 2007 november, 2007 - rev. 6 1 publication order number: 2n6667/d 2n6667, 2n6668 darlington silicon power transistors designed for general-purpose amplifier and low speed switching applications. ? high dc current gain - h fe = 3500 (typ) @ i c = 4.0 adc ? collector-emitter sustaining voltage - @ 200 madc v ceo(sus) = 60 vdc (min) - 2n6667 = 80 vdc (min) - 2n6668 ? low collector-emitter saturation voltage - v ce(sat) = 2.0 vdc (max)@ i c = 5.0 adc ? monolithic construction with built-in base-emitter shunt resistors ? to-220ab compact package ? complementary to 2n6387, 2n6388 ? pb-free packages are available* figure 1. darlington schematic base emitter collector 8 k 120 *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information 2n6667 to-220ab 50 units/rail marking diagram pnp silicon darlington power transistors 10 a, 60-80 v, 65 w x = 7 or 8 a = assembly location y = year ww = work week g = pb-free package 2n6667g to-220ab (pb-free) 50 units/rail 2n6668 to-220ab 50 units/rail 2n6668g to-220ab (pb-free) 50 units/rail http://onsemi.com case 221a-09 to-220ab style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4 2n666x aywwg
2n6667, 2n6668 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (note 1) ??????????????????? ??????????????????? rating ????? ????? ????? ????? ????? ????? ??? ??? ??????????????????? ??????????????????? collector-emitter voltage ????? ????? ????? ????? ????? ????? ??? ??? ??????????????????? ??????????????????? ????? ????? ????? ????? ????? ????? ??? ??? ??????????????????? ??????????????????? ????? ????? ????????? ????????? ??? ??? ??????????????????? ??????????????????? ??????????????????? ????? ????? ????? ????????? ????????? ????????? ??? ??? ??? ??????????????????? ??????????????????? ????? ????? ????????? ????????? ??? ??? ??????????????????? ??????????????????? c derate above 25 c ????? ????? ????????? ????????? ??? ??? c ??????????????????? ??????????????????? ??????????????????? c derate above 25 c ????? ????? ????? ????????? ????????? ????????? ??? ??? ??? c ??????????????????? ??????????????????? ????? ????? ????????? ????????? ??? ??? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. ????????????????????????????????? ????????????????????????????????? thermal characteristics ?????????????????????? ?????????????????????? ????? ????? ?????? ?????? ??? ??? ?????????????????????? ?????????????????????? thermal resistance, junction to case ????? ????? jc ?????? ?????? ??? ??? c/w ?????????????????????? ?????????????????????? ????? ????? ja ?????? ?????? ??? ??? c/w ????????????????????????????????? electrical characteristics (note 1) (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector-emitter sustaining voltage (note 2) 2n6667 (i c = 200 madc, i b = 0) 2n6668 ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? c) 2n6667 (v ce = 80 vdc, v eb(off) = 1.5 vdc, t c = 125 c) 2n6668 ????? ????? ????? ????? ??? ??? ??? ??? ???? ???? ???? ???? ??? ??? ??? ??? adc madc ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 1) ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? current gain - bandwidth product (i c = 1.0 adc, v ce = 5.0 vdc, f test = 1.0 mhz) ????? ??? ???? ??? ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? 300 s, duty cycle 2%.
2n6667, 2n6668 http://onsemi.com 3 figure 2. switching times test circuit 0 v cc - 30 v scope tut + 4.0 v t r , t f 10 ns duty cycle = 1.0% r c d 1 , must be fast recovery types e.g., 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 25 s d 1 51 r b & r c varied to obtain desired current levels v 2 approx + 8 v v 1 approx - 12 v 8 k 120 for t d and t r , d 1 is disconnected and v 2 = 0 r b t, time (s) 80 40 20 0 20 40 80 100 120 160 figure 3. power derating t, temperature ( c) p d , power dissipation (watts) 60 t a t c 4 2 1 3 0 60 140 t a t c 0.1 figure 4. typical switching times i c , collector current (amps) 5 0.7 0.3 0.2 0.2 10 v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c t f 15 t s t r 0.1 1 3 0.5 2 .t d 0.5 2 7 0.3 0.7 3 7 10 figure 5. thermal response t, time (ms) 1 0.01 0.01 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.02 r(t) normalized effective transient thermal resistance 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 1000 500 z jc (t) = r(t) r jc r jc = 1.92 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.05 0.1 0.02 0.01 0.2
2n6667, 2n6668 http://onsemi.com 4 bonding wire limit thermal limit @ t c = 25 c second breakdown limit 20 1 figure 6. maximum safe operating area 2 0.02 10 20 100 t j = 150 c 0.2 5 0.5 i c , collector current (amps) v ce , collector-emitter voltage (volts) 10 50 1 0.1 dc 270 37 2n6667 2n6668 curves apply below rated v ceo 1 ms 100 s 5 ms 3 0.03 0.05 0.3 530 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c - v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 5. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10,000 1 figure 7. typical small-signal current gain f, frequency (khz) 10 2 5 10 20 50 100 200 1000 500 100 5000 h fe , small-signal curent gain 20 200 500 2000 1000 50 t c = 25 c v ce = 4 volts i c = 3 amps 300 0.1 figure 8. typical capacitance v r , reverse voltage (volts) 30 1 2 5 20 100 10 c, capacitance (pf) 200 100 70 50 c ib c ob 50 0.2 0.5 t j = 25 c 37 70 30 300 v ce , collector-emitter voltage (volts) 0.1 figure 9. typical dc current gain i c , collector current (amps) 0.2 0.3 0.5 0.7 1 2 10 500 300 h fe , dc current gain t j = 150 c v ce = 3 v 200 7 20,000 5000 10,000 3000 2000 1000 35 figure 10. typical collector saturation region 2.6 i b , base current (ma) 0.3 0.5 1 2 3 5 7 30 2.2 1.8 1.4 1 i c = 2 a t j = 25 c 4 a 6 a 0.6 0.7 20 10 t j = - 55 c 7000 700 t j = 25 c
2n6667, 2n6668 http://onsemi.com 5 i c , collector current (amps) v be(sat) @ i c /i b = 250 v, voltage (volts) figure 11. typical ?on? voltages v ce(sat) @ i c /i b = 250 t j = 25 c v be @ v ce = 3 v 0.1 0.2 0.3 0.5 0.7 1 2 10 7 35 3 2 1.5 1 0.5 figure 12. typical temperature coefficients +3 +2 0 -1 -2 -3 +5 +4 +1 2.5 0.1 0.2 0.3 0.5 0.7 1 2 10 7 35 i c , collector current (amp) v , temperature coefficients (mv/ c) -55 c to 25 c 25 c to 150 c -55 c to 25 c 25 c to 150 c vb for v be -4 -5 ? vc for v ce(sat) h fe @v ce 3.0v 3 *i c /i b 10 5 figure 13. typical collector cut-off region v be , base-emitter voltage (volts) 10 2 10 1 10 0 , collector current (a) i c 10 -1 v ce = 30 v t j = 150 c 100 c 25 c reverse forward 10 3 10 4 +0.2 +0.4 0 -0.2 -0.4 -0.6 -0.8 -1.2 -1.4 -1 +0.6
2n6667, 2n6668 http://onsemi.com 6 package dimensions to-220 case 221a-09 issue ae notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane -t- c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free usa/canada japan : on semiconductor, japan customer focus center ?2-9-1 kamimeguro, meguro-ku, tokyo, japan 153-0051 ? phone : 81-3-5773-3850 2n6667/d literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 61312, phoenix, arizona 85082-1312 usa ? phone : 480-829-7710 or 800-344-3860 toll free usa/canada ? fax : 480-829-7709 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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